Silicon carbide (SiC) materi kristal tunggal nduweni jembar band longkangan gedhe (~ Si 3 kaping), konduktivitas termal dhuwur (~ Si 3,3 kaping utawa GaAs 10 kaping), tingkat migrasi saturasi elektron dhuwur (~ Si 2,5 kaping), listrik risak dhuwur lapangan (~ Si 10 kaping utawa GaAs 5 kaping) lan ciri pinunjul liyane.
energi Semicera bisa nyedhiyani pelanggan karo kualitas dhuwur Conductive (Conductive), Semi-insulating (Semi-insulating), HPSI (High Purity semi-insulating) substrate silikon karbida; Kajaba iku, kita bisa nyedhiyani pelanggan karo lembaran epitaxial silikon karbida homogen lan heterogen; Kita uga bisa ngatur sheet epitaxial miturut kabutuhan khusus pelanggan, lan ora ana jumlah pesenan minimal.
| barang | Produksi | Riset | goblok |
| Parameter Kristal | |||
| Politipe | 4H | ||
| Kesalahan orientasi lumahing | <11-20 >4±0.15° | ||
| Parameter Listrik | |||
| Dopan | Nitrogen tipe n | ||
| Resistivity | 0,015-0,025 ohm · cm | ||
| Parameter Mekanik | |||
| Dhiameter | 99,5 - 100 mm | ||
| kekandelan | 350±25 μm | ||
| Orientasi flat utama | [1-100]±5° | ||
| Dawane warata utami | 32,5 ± 1,5 mm | ||
| Posisi flat sekunder | 90° CW saka flat primer ±5°. silikon pasuryan munggah | ||
| Dawane flat sekunder | 18 ± 1,5 mm | ||
| TTV | ≤5 μm | ≤10 μm | ≤20 μm |
| LTV | ≤2 μm (5mm * 5mm) | ≤5 μm (5mm * 5mm) | NA |
| gandhewo | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| Warp | ≤20 μm | ≤45 μm | ≤50 μm |
| Kekasaran ngarep (Si-face) (AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Struktur | |||
| Kapadhetan micropipe | ≤1 ea/cm2 | ≤5 ea/cm2 | ≤10 ea/cm2 |
| Kotoran logam | ≤5E10atom/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Kualitas ngarep | |||
| Ngarep | Si | ||
| Rampung lumahing | Si-face CMP | ||
| partikel | ≤60ea/wafer (ukuran≥0.3μm) | NA | |
| Goresan | ≤2ea/mm. Dawane kumulatif ≤Diameter | Kumulatif dawa≤2 * Diameter | NA |
| Kulit jeruk / pit / noda / striations / retak / kontaminasi | ora ana | NA | |
| Pinggir chip / indents / fraktur / piring hex | ora ana | NA | |
| Wilayah politipe | ora ana | Area kumulatif≤20% | Area kumulatif≤30% |
| Tandha laser ngarep | ora ana | ||
| Kualitas mburi | |||
| Rampung mburi | C-pasuryan CMP | ||
| Goresan | ≤5ea/mm, Kumulatif length≤2 * Diameter | NA | |
| Cacat mburi (keripik pinggir / indentasi) | ora ana | ||
| Kekasaran mburi | Ra≤0.2nm (5μm*5μm) | ||
| Tandha laser mburi | 1 mm (saka pinggir ndhuwur) | ||
| Pinggir | |||
| Pinggir | Chamfer | ||
| Kemasan | |||
| Kemasan | Kanthong njero diisi nitrogen lan kantong njaba disedot. Kaset multi-wafer, epi-siap. | ||
| * Cathetan: "NA" tegese ora ana panjaluk. | |||
